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Development of Formation Technique of Gate SiO2 Layer for GaN Power Transistors
Development of Formation Technique of Gate SiO2 Layer for GaN Power Transistors
2017
Takuya Maekawa
Shiniti Ogiso
Keisuke Arimoto
Junji Yamanaka
Tetuji Arai
Kiyokazu Nakagawa
Toshiyuki Takamatsu
Katunori Ueno
Keywords:
Power semiconductor device
Materials science
Electronic engineering
Optoelectronics
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