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S. Dunkel
S. Dunkel
GlobalFoundries
Optoelectronics
Physics
Bit cell
Metal gate
Transistor
2
Papers
148
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A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV device
2018
IEDM | International Electron Devices Meeting
Ralf Richter
Martin Trentzsch
S. Dunkel
J. Muller
P. Moll
Boris Bayha
K. Mothes
A. Henke
Martin Mazur
J. Paul
Peter Krottenthaler
J. Poth
S. Jansen
R. Huselitz
Hoon Kim
Alban Zaka
Tom Herrmann
El Mehdi Bazizi
Sven Beyer
Parviz Ghazavi
Henry Om'mani
Steven Lemke
Yuri Tkachev
F. Zhou
Jinho Kim
Xian Liu
Vipin Tiwari
Nhan Do
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A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
2017
IEDM | International Electron Devices Meeting
S. Dunkel
Martin Trentzsch
Ralf Richter
P. Moll
C. Fuchs
O. Gehring
M. Majer
S. Wittek
B. Muller
T. Melde
Halid Mulaosmanovic
Stefan Slesazeck
Stefan Müller
J. Ocker
M. Noack
D. A. Löhr
P. Polakowski
Johannes Müller
T. Mikolajick
J. Hontschel
B. Rice
J. Pellerin
Sven Beyer
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Citations (143)
1