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Renee T. Mo

IBM

4

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High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications

2017 VLSIT | Symposium on VLSI Technology
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Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT

2016 VLSIT | Symposium on VLSI Technology
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Ge-on-insulator lateral bipolar transistors

2016 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation

2005 Solid State Phenomena
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