Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT

We demonstrate high-performance (HP) High-Ge-Content (HGC) SiGe pMOS FinFETs with scaled EOT and improved junction. For the first time, SiGe FinFET EOT scaling down to ∼7A has been achieved. In addition, improved junction and series resistance has been demonstrated for HGC SiGe, by a proper choice of spacer thickness and interface-layer as well as hot ion-implant (I/I), resulting in significant R on reduction down to 250 and 200Ω.µm, respectively. We report the highest “SiGe extrinsic g m ” reported to date with g m, LIN =0.5mS/µm and g m, SAT =2.7/2.5mS/µm at V DD =1.0/0.5V, the highest HGC SiGe I on =0.45mA/µm at fixed HP I off =100nA/µm at V DD =0.5V and the highest pMOS FinFET performance reported to date at sub-35nm L G .