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Masayuki Tomoyasu

Tokyo Electron

11

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53

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First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability

2012 IEEE Transactions on Electron Devices
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Fabrication of segmented-channel MOSFETs for reduced short-channel effects

2011 ISDRS | International Semiconductor Device Research Symposium
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Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si Cap and high-k metal gate stacks

2009 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-k Dielectric and Metal Gate

2009 Japanese Journal of Applied Physics
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High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO 2 High-k Dielectric and Metal Gate

2008 The Japan Society of Applied Physics
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Trimming of hard-masks by gaseous Chemical Oxide Removal (COR) for sub-10 nm gates/fins, for gate length control and for embedded logic

2004 ASMC | Advanced Semiconductor Manufacturing Conference
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Feedforward of mask open measurements on an integrated scatterometer to improve gate linewidth control

2004
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Method and apparatus for substrate treatment by means of plasma

1995
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