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Yasushi Akasaka

Tokyo Electron

5

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First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability

2012 IEEE Transactions on Electron Devices
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Fabrication of segmented-channel MOSFETs for reduced short-channel effects

2011 ISDRS | International Semiconductor Device Research Symposium
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Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures

2007 Journal of Applied Physics
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Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures - Remarkable Advantages of La2O3 over HfO2 -

2006
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