author-photo

Martin Domeij

ON Semiconductor

6

Papers

56

Citations

Citation Trend

Filter By

Papers (4) Sort By

Journal Conference Others

Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET

2020 Materials Science Forum
Show All
- Source
- Cite
- Save
Citations (0)
1200 V SiC MOSFETs with Stable VTH under High Temperature Gate Bias Stress

2019 Materials Science Forum
Show All
- Source
- Cite
- Save
Citations (1)
Avalanche rugged 1200 V 80 m Ω SiC MOSFETs with state-of-the-art threshold voltage stability

2018 WiPDA | IEEE Workshop on Wide Bandgap Power Devices and Applications
Show All
- Source
- Cite
- Save
Citations (0)
1200V 5.2 mohmcm2 4H-SiC BJTs with a high common-emitter current gain

2007 IEEE Electron Device Letters
Show All
- Source
- Cite
- Save
Citations (47)