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Shangqing Ren
Shangqing Ren
High-κ dielectric
Materials science
Temperature instability
Metal gate
Activation energy
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Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks
2016
Hao Xu
yanghong
Yanrong Wang
wangwenwu
Guangxing Wan
Shangqing Ren
Weichun Luo
Luwei Qi
Chao Zhao
Dapeng Chen
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Energy distribution extraction of negative charges responsible for positive bias temperature instability
2015
Shangqing Ren
yanghong
wangwenwu
Bo Tang
tangzhaoyun
Xiaolei Wang
Hao Xu
Weichun Luo
Chao Zhao
Yan Jiang
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Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process
2015
Luwei Qi
yanghong
Shangqing Ren
Yefeng Xu
Weichun Luo
Hao Xu
Yanrong Wang
Bo Tang
wangwenwu
Yan Jiang
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Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process
2015
Shangqing Ren
yanghong
Bo Tang
Hao Xu
Weichun Luo
tangzhaoyun
Yefeng Xu
Jing Xu
Dahai Wang
Junfeng Li
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