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Yefeng Xu

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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

2016
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Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs

2015 Solid-state Electronics
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Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

2014
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