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Sung-Wei Huang

National Formosa University

8

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Transient Current Enhancement in MIS Tunnel Diodes With Lateral Electric Field Induced by Designed High-Low Oxide Layers

2021 IEEE Transactions on Electron Devices
- Sung-Wei Huang
- Jenn-Gwo Hwu
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Bimetallic oxide nanoparticles CoxMoyO as charge trapping layer for nonvolatile memory device applications

2007 Applied Physics Letters
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Improved electrical characteristics of high-k gated MOS devices by nitrogen incorporation with plasma immersion ion implantation (PIII)

2007 Microelectronic Engineering
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Characterization of co x ni y o bimetallic oxide nanoparticles as charge trapping nodes in nonvolatile memory devices

2007 ISDRS | International Semiconductor Device Research Symposium
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Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)

2006 The Japan Society of Applied Physics
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