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Mark W. Michael

Advanced Micro Devices

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45nm gate length Bulk/PD-SOI CMOS transistors with low gate leakage current for high speed and low power applications

2003 ESSDERC | European Solid-State Device Research Conference
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Barriere d'azote sous les regions source/drain d'un transistor retardant la diffusion des dopants

1998
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Use of exposure compensation to improve device performance for speed and binning based on electrical parametric feedback into fabrication design

1997
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Citations (3)