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B. Crew
B. Crew
Physics
Transistor
Static random-access memory
Integrated injection logic
Electronic engineering
2
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199
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An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0.7 - 1.4 V
2001
IEDM | International Electron Devices Meeting
Scott E. Thompson
Mohsen Alavi
R. Arghavani
A. Brand
Robert M. Bigwood
J. Brandenburg
B. Crew
Valery M. Dubin
Makarem A. Hussein
P. Jacob
C. Kenyon
E. Lee
B. McIntyre
Z. Ma
Peter K. Moon
P. Nguyen
M. Prince
R. Schweinfurth
Swaminathan Sivakumar
P. Smith
M. Stettler
Sunit Tyagi
M. Wei
J. Xu
Simon Yang
M. Bohr
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Citations (63)
A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects
2000
IEDM | International Electron Devices Meeting
Sunit Tyagi
Mohsen Alavi
Robert M. Bigwood
T. Bramblett
J. Brandenburg
W. H. Chen
B. Crew
Makarem A. Hussein
P. Jacob
C. Kenyon
C. Lo
B. McIntyre
Z. Ma
Peter K. Moon
P. Nguyen
L. Rumaner
R. Schweinfurth
Swaminathan Sivakumar
M. Stettler
Scott E. Thompson
B. Tufts
J. Xu
Simon Yang
M. Bohr
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Citations (136)
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