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N. A. Kornyushkin
N. A. Kornyushkin
Condensed matter physics
Chemistry
Indium arsenide
Band gap
Power law
5
Papers
3
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Effect of interface properties and deep levels in the band gap on the capacitance-voltage characteristics of indium arsenide MIS structures
1996
Semiconductors
N. A. Kornyushkin
N. A. Valisheva
A. P. Kovchavtsev
G. L. Kuryshev
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Effect of interface properties and deep levels in the band gap on the capacitance-voltage characteristics of indium arsenide MIS structures
1996
N. A. Kornyushkin
N. A. Valisheva
A. P. Kovchavtsev
G. L. Kuryshev
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Optical and electrical properties of the HgTe thin films grown by molecular beam epitaxy
1991
N. A. Kornyushkin
T.I. Kurdina
A. S. Mardezhov
I. E. Nis
L.M. Ostapovskij
N.B. Pridachin
V. G. Remesnik
S. I. Chikichev
V. A. Shvets
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Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability
1985
Physica Status Solidi (a)
N. A. Kornyushkin
N. I. Bryzgalova
A.A. Frantsuzov
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Relaxation of Current Flowing through Oxide Thermally Grown on Polycrystalline Silicon
1985
Physica Status Solidi (a)
N. A. Kornyushkin
N. I. Bryzgalova
A.A. Frantsuzov
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