Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability

Relaxation of the tunnel injection limited current caused by electron capture in oxide is considered for two model distribution of the traps in oxide: traps located in the plane parallel to the injecting electrode and traps uniformly distributed in oxide. It is shown that current relaxation depends on the oxide electric field. Current relaxation is practically absent for a high field region E ≪ Ec and the current relaxation law is j = j0/(1 + t/τ) for a low field region E ≪ Ec, both for traps placed in the plane and traps uniformly distributed in the oxide. The characteristic electric field, Ec, depends on the trap density, Ec = . In a moderate electric field region, E ≈ Ec, the current relaxation law is j = j0(t/τ)−n, n decreasing as the oxide field increases n = 1/(1 + (E/Ec)2), for uniformly distributed traps in the oxide and the current relaxation curves can be approximated by a power law, j ∽ t−n, on the rapid part of the relaxation curve for traps located in the plane. [Russian Text Ignored].