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Shiqiang Ren

Liaocheng University

5

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13

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New approach for fabrication of annealing-free ferroelectric HfO2-based films at room temperature

2021 Ceramics International
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Microstructure and ferroelectric properties of Ta-doped Bi3.25La0.75Ti3O12/ZnO thin film capacitors

2021 Ceramics International
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Phase transformation and dielectric properties of Y doped HfO2 thin films

2021 Journal of Alloys and Compounds
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Effects of Co-Doped B and Al on the Improvement of Electrical Properties of Ga and P Contaminated Upgraded Metallurgical-Grade Silicon Materials

2020 Journal of Electronic Materials
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Microstructure and conversion efficiency of multicrystalline silicon ingot prepared by upgraded metallurgical grade silicon

2018 Solar Energy Materials and Solar Cells
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