Phase transformation and dielectric properties of Y doped HfO2 thin films

Abstract In this work, we investigated the dielectric properties of yttrium (Y) doped hafnium oxide (HfO2) films using metal-insulator-semiconductor structures with various Y contents and film thicknesses. A phase diagram was built to explain the variations in the crystal structure and dielectric properties for Y doped HfO2 based films as a function of Y content and film thickness. This phase diagram would be a useful tool for optimising the electrical properties of Y doped HfO2 based thin films.