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Patrick Austin
Patrick Austin
University of Toulouse
Electronic engineering
Power semiconductor device
Optoelectronics
Physics
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7
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45
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Ohmic contacts study of P + N diodes on (111) and (100) diamond
2019
PEDS | International Conference on Power Electronics and Drive Systems
Lya Fontaine
Karine Isoird
Josiane Tasselli
Patrick Austin
Alain Cazarre
A. Boussadi
Jocelyn Achard
M.-A. Pinault-Thaury
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TCAD Simulation of the Single Event Effects in Normally-OFF GaN Transistors After Heavy Ion Radiation
2016
RADECS | European Conference on Radiation and Its Effects on Components and Systems
Moustafa Zerarka
Patrick Austin
Alain Bensoussan
F. Morancho
André Durier
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An improved junction termination design using deep trenches for superjunction power devices
2015
MIXDES | International Conference Mixed Design of Integrated Circuits and Systems
Sylvain Noblecourt
F. Morancho
K. Isoird
Patrick Austin
J. Tasselli
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Analayse du mécanisme d'un défaut ESD sur un MESFET en SiC
2015
Tanguy Phulpin
David Trémouilles
K. Isoird
Dominique Tournier
Philippe Godignon
Patrick Austin
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Distributed Modeling Approach Applied to the IGBT
2010
Patrick Austin
Jean Louis Sanchez
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