Ohmic contacts study of P + N diodes on (111) and (100) diamond

Pseudo-vertical P+N diamond diodes are fabricated. We focused on the determination of specific contact resistance of Ti-based contacts for (111) and (100) p-type diamond layers doped around 1019 at/cm3 using circular Transfer Length Method (cTLM). Ohmic behavior is obtained and the variation of the specific contact resistance is discussed.