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M. V. Maitama
M. V. Maitama
Russian Academy of Sciences
Optoelectronics
Integrated circuit
Physics
Amplifier
Gallium nitride
6
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Ku and Ka-band Gallium Nitride Monolithic Integrated Circuits on Silicon Substrates
2021
Russian Microelectronics
Yu. V. Fedorov
A. S. Bugaev
S.A. Gamkrelidze
D. L. Gnatyuk
O.S. Matveenko
A. Yu. Pavlov
R. R. Galiev
A. V. Zuev
M. V. Maitama
N. V. Shavruk
K. N. Tomosh
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Cascode Monolithic Integrated Circuit of a Low-Noise Amplifier in the Frequency Range of 8-12 GHz on a Gallium Nitride Nanoheterostructure
2020
S.A. Gamkrelidze
P. P. Maltsev
Yu. V. Fedorov
D. L. Gnatyuk
A. V. Zuev
M. V. Maitama
A.O. Mikhalev
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Microwave Characteristics of Amplifiers on Nanoheterostructures of Gallium Nitride in the 80–100 GHz Frequency Range
2020
Russian Microelectronics
D. L. Gnatyuk
R. R. Galiev
A. V. Zuev
S.L. Krapukhina
M. V. Maitama
P. P. Maltsev
O.S. Matveenko
Yu. V. Fedorov
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Microconsuming 8–12 GHz GaN Power Amplifiers
2019
Russian Microelectronics
S.A. Gamkrelidze
D. L. Gnatyuk
A. V. Zuev
M. V. Maitama
P. P. Maltsev
A.O. Mikhalev
Yu. V. Fedorov
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Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure
2017
Russian Microelectronics
Yu. V. Fedorov
D. L. Gnatyuk
A. V. Zuev
M. V. Maitama
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