Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure

The results of designing low-noise broadband amplifiers on an AlGaN/AlN/GaN HEMT heterostructure are presented. In the investigations, two variants of low-noise amplifiers executed in a two-cascade circuit are considered and fabricated. The parameters of the fabricated monolithic integrated circuits of lownoise amplifiers are given.