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J.K. Schaeffer
J.K. Schaeffer
GlobalFoundries
Device Properties
Transistor
Atomic layer deposition
Engineering
High-κ dielectric
3
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35
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Impact of precursors choice on characteristics of PEALD SiN for spacer applications
2013
ICICDT | International Conference on IC Design and Technology
Dina H. Triyoso
Klaus Hempel
S. Ohsiek
J. Shu
J.K. Schaeffer
Markus Lenski
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Citations (1)
Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
2013
ECS Journal of Solid State Science and Technology
Dina H. Triyoso
Klaus Hempel
S. Ohsiek
V. Jaschke
J. Shu
Sergej Mutas
Kornelia Dittmar
J.K. Schaeffer
Dirk Utess
Markus Lenski
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Citations (29)
Robust PEALD SiN spacer for gate first high-k metal gate integration
2012
ICICDT | International Conference on IC Design and Technology
Dina H. Triyoso
V. Jaschke
J. Shu
S Mutas
Klaus Hempel
J.K. Schaeffer
Markus Lenski
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Citations (5)
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