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Y. F. En
Y. F. En
Optoelectronics
Electronic engineering
Condensed matter physics
Nuclear magnetic resonance
Physics
4
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13
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An ion beam layer removal method of determining the residual stress in the as-fabricated TSV-Cu/TiW/SiO2/Si interface on a nanoscale
2020
Microelectronics Reliability
S. Chen
Y. F. En
Guoyuan Li
Z.Z. Wang
R. Gao
Rui Ma
L.X. Zhang
Y. Huang
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A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs
2020
IRPS | International Reliability Physics Symposium
R. Gao
M. Mehedi
H. Chen
X. Wang
J. F. Zhang
X L Lin
Z. Y. He
Y. Q. Chen
D. Y. Lei
Y. Huang
Y. F. En
Zhigang Ji
Runsheng Wang
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Degradation mechanism of AlGaN/GaN HEMTs during high temperature operation stress
2018
Semiconductor Science and Technology
Y. Q. Chen
X.Y. Liao
C Zeng
C. Peng
Y Liu
R. G. Li
Y. F. En
Y. Huang
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Investigation of electrical properties of individual GaN nanowire‐based ferroelectric field effect transistor
2015
Physica Status Solidi (a)
Y. Q. Chen
X. B. Xu
Y D Lu
X Wang
Y. F. En
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Citations (5)
1