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Hayato Mukai
Hayato Mukai
Optoelectronics
Materials science
Porous silicon
Silicon
Photoacoustic effect
8
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9
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Fabrication of GaN FinFETs using selective area growth: Suppression of leakage
2020
The Japan Society of Applied Physics
K. Takayama
Takashi Ota
Mitsutaka Sasaki
Hayato Mukai
Takuya Hamada
Tokio Takahashi
Toshihide Ide
Mitsuaki Shimizu
Takuya Hoshii
Kuniyuki Kakushima
Hitoshi Wakabayashi
Kazuo Tsutsui
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Fabrication of GaN FinFETs using selective area growth method
2019
The Japan Society of Applied Physics
Hayato Mukai
Ken Takayama
Takuya Hamada
Tokio Takahashi
Toshihide Ide
Mitsuaki Shimizu
Takuya Hoshii
Kuniyuki Kakushima
Hitoshi Wakabayashi
Hiroshi Iwai
Kazuo Tsutsui
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Study of low resistivity regions generated on the process of selective area growth of GaN Fin structures
2019
The Japan Society of Applied Physics
Ken Takayama
Hayato Mukai
Takuya Hamada
Tokio Takahashi
Toshihide Ide
Mitsuaki Shimizu
Takuya Hoshii
Kuniyuki Kakushima
Hitoshi Wakabayashi
Hiroshi Iwai
Kazuo Tsutsui
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Two kinds of enhancement in photoluminescence by chemical etching of porous silicon
2002
Materials Science and Engineering B-advanced Functional Solid-state Materials
Masato Ohmukai
Hayato Mukai
Yasuo Tsutsumi
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Citations (6)
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