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Chan Soo Shin

Yonsei University

6

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Selective epitaxial growth of GaAs on a Si (001) surface formed by an in situ bake in a metal-organic chemical vapor deposition reactor

2017 Journal of Nanoscience and Nanotechnology
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Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor

2016 ECS Journal of Solid State Science and Technology
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In0.7Ga0.3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of ∼60 mV/dec

2014 Applied Physics Express
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Sub-100 nm regrown S/D Gate-Last In 0.7 Ga 0.3 As QW MOSFETs with μ n,eff > 5,500 cm 2 /V-s

2014 VLSIT | Symposium on VLSI Technology
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