In0.7Ga0.3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of ∼60 mV/dec

We have successfully demonstrated In0.7Ga0.3As quantum well (QW) MOSFETs with Al2O3/HfO2 toward a subthreshold swing of ~60 mV/decade. The fabricated In0.7Ga0.3As QW MOSFET with Lg = 5 µm exhibits an excellent subthreshold swing of 69 mV/dec and a drain-induced barrier lowering (DIBL) of less than 10 mV/V at VDS = 0.5 V with EOT ~0.8 nm. On the basis of measured C–V and I–V data, we extracted the effective mobility (μn,eff) from our long-channel InGaAs QW MOSFET, yielding an excellent μn,eff of approximately 3,400 cm2 V−1 s−1 at 300 K.