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T. Metzger

Technische Universität München

14

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1326

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Properties and applications of MBE grown AlGaN

1997 Materials Science and Engineering B-advanced Functional Solid-state Materials
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Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

1997 Applied Physics Letters
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Characterisation of Al x Ga 1-x N Films Prepared by Plasma Induced Molecular Beam Epitaxy on C-Plane Sapphire

1997 MRS Proceedings
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Raman study of the optical phonons in AlxGa1−xN alloys

1997 Solid State Communications
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Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

1996 Journal of Vacuum Science & Technology B
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Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films

1996 Applied Physics Letters
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TRIAZIDOGALLIUM AND DERIVATIVES : NEW PRECURSORS TO THIN FILMS AND NANOPARTICLES OF GAN

1996 Angewandte Chemie
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Growth of GaNAlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium

1996 Journal of Crystal Growth
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PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN

1996 Mrs Internet Journal of Nitride Semiconductor Research
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X-ray diffraction study of gallium nitride grown by MOCVD

1996 Physica Status Solidi B-basic Solid State Physics
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Citations (13)