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J. Eng
J. Eng
Alcatel-Lucent
Optoelectronics
Electronic engineering
Materials science
Chemical engineering
Gate oxide
5
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138
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The evolution of chemical oxides into ultrathin oxides: A spectroscopic characterization
2001
Solid State Phenomena
J. Eng
R. L. Opila
J. M. Rosamilia
B. J. Sapjeta
Yves J. Chabal
T. Boone
R. Masaitis
T. Sorsch
Martin L. Green
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Evolution of chemical oxides into ultrathin oxides: a spectroscopic characterization
2000
J. Eng
R. L. Opila
J. M. Rosamilia
B. J. Sapjeta
Yves J. Chabal
T. Boone
R. Masaitis
T. Sorsch
Martin L. Green
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Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
2000
Journal of Applied Physics
Jane P. Chang
Martin L. Green
Vincent M. Donnelly
R. L. Opila
J. Eng
J. Sapjeta
P.J. Silverman
B. E. Weir
H. C. Lu
T. Gustafsson
Eric Garfunkel
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Citations (111)
Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications
2000
IEDM | International Electron Devices Meeting
L. Manchanda
Martin L. Green
R. B. van Dover
M.D. Morris
A. Kerber
Y. Hu
J.-P. Han
P.J. Silverman
T. Sorsch
Gary Robert Weber
Vincent M. Donnelly
K. Pelhos
F. Klemens
N.A. Ciampa
Avi Kornblit
Y.O. Kim
John Eric Bower
D. Barr
E. Ferry
D.C. Jacobson
J. Eng
B. Busch
H. Schulte
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Citations (27)
InP-based optical receiver/2 × 2 crosspoint switch for high speed optical communications
1990
R. B. Bylsma
C. W. Seabury
G. P. Vella-Coleiro
S. J. Kim
P. S. Davisson
C. M L Yee
Jichai Jeong
J. Eng
D. DeBlis
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