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L. Manchanda

Bell Labs

28

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729

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Crystallization kinetics in amorphous (Zr0.62Al0.38)O1.8 thin films

2001 Journal of Vacuum Science and Technology
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Etching of high-k dielectric Zr[sub 1-x]Al[sub x]O[sub y] films in chlorine-containing plasmas

2001 Journal of Vacuum Science and Technology
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Gate quality doped high K films for CMOS beyond 100 nm: 3-10 nm Al/sub 2/O/sub 3/ with low leakage and low interface states

1998 IEDM | International Electron Devices Meeting
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Gate Quality Doped High K Films for CMOS Beyond 100 nm: 3 - lOnm A1,0, with Low Leakage and Low Interface States

1998 International Electron Devices Meeting
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Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation

1996 IEEE Transactions on Electron Devices
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A symmetric 0.25 /spl mu/m CMOS technology for low-power, high-performance ASIC applications using 248 nm DUV lithography

1995 VLSIT | Symposium on VLSI Technology
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Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface

1995 Journal of Applied Physics
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RTO of Silicon in N2O Between 800 and 12008C: Incorporated Nitrogen and Roughness

1994
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Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

1994 Applied Physics Letters
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A boron-retarding and high interface quality thin gate dielectric for deep-submicron devices

1993 IEDM | International Electron Devices Meeting
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Citations (1)