Old Web
English
Sign In
Acemap
>
authorDetail
>
Charles W. Seabury
Charles W. Seabury
Bell Labs
Optoelectronics
Physics
Electronic engineering
Gallium arsenide
Preamplifier
6
Papers
72
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (5)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide
1991
IEEE Photonics Technology Letters
Charles W. Seabury
R. B. Bylsma
G. P. Vella-Coleiro
Sung June Kim
P S Davisson
C. M. L. Yee
James Eng
D. Deblis
Jichai Jeong
Y. K. Jhee
Show All
Source
Cite
Save
Citations (6)
High-performance ion-implanted MES-FET on InP using enhanced barrier self-aligned Schottky gate
1989
IEEE Transactions on Electron Devices
U. K. Chakrabarti
Charles W. Seabury
Niloy K. Dutta
G. P. Vella-Coleiro
Show All
Source
Cite
Save
Citations (3)
Monolithically integrated InGaAs PIN-InP JFET amplifier with high sensitivity
1988
IEEE Transactions on Electron Devices
Sung J. Kim
G. Guth
G. P. Vella-Coleiro
Charles W. Seabury
Show All
Source
Cite
Save
Citations (9)
Monolithic integration of InGaAs p-i-n photodetector with full ion-implanted InP JFET amplifier
1988
IEEE Electron Device Letters
Sung J. Kim
G. Guth
G. P. Vella-Coleiro
Charles W. Seabury
W. A. Sponsler
B. J. Rhoades
Show All
Source
Cite
Save
Citations (47)
Protective coating on the p-n junction of In0.53Ga0.47As/InP p-i-n planar diodes by vacuum-evaporated glass
1987
Journal of Applied Physics
Yusuke Ota
Patrick H‐S. Hu
Charles W. Seabury
Michael G. Brown
Show All
Source
Cite
Save
Citations (7)
1