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Shinsaku Kawabata
Shinsaku Kawabata
University of Fukui
Optoelectronics
algan gan
Threshold voltage
Materials science
Insulator (electricity)
6
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12
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GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
2021
Applied Physics Express
Rui Shan Low
Joel T. Asubar
Ali Baratov
Shunsuke Kamiya
Itsuki Nagase
Shun Urano
Shinsaku Kawabata
Hirokuni Tokuda
Masaaki Kuzuhara
Yusui Nakamura
Kenta Naito
Tomohiro Motoyama
Zenji Yatabe
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Enhancement-mode AlGaN/GaN MIS-HEMTs with high VTH and high IDmax using recessedstructure with regrown AlGaN barrier
2020
IEEE Electron Device Letters
Joel T. Asubar
Shinsaku Kawabata
Hirokuni Tokuda
Akio Yamamoto
Masaaki Kuzuhara
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Impact of SiN capping during Ohmic Annealing on Performance of GaN-based MISHEMTs
2019
IMFEDK | International Meeting for Future of Electron Devices, Kansai
R. S. Low
Shinsaku Kawabata
Joel T. Asubar
Hirokuni Tokuda
Masaaki Kuzuhara
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Improved insulator/semiconductor interfaces in Al 2 O 3 /AlGaN/GaN structures by AlGaN layer regrowth
2019
The Japan Society of Applied Physics
Shinsaku Kawabata
Joel T. Asubar
Hirokuni Tokuda
Akio Yamamoto
Masaaki Kuzuhara
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Improved insulator/semiconductor interfaces in Al 2 O 3 /AlGaN/GaN structures by AlGaN layer regrowth
2019
IPRM | International Conference on Indium Phosphide and Related Materials
Shinsaku Kawabata
Joel T. Asubar
Hirokuni Tokuda
Akio Yamamoto
Masaaki Kuzuhara
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Impact of SiN capping during Ohmic Annealing on Performance of GaN-based MISHEMTs
2019
R. S. Low
Shinsaku Kawabata
Joel T. Asubar
Hirokuni Tokuda
Masaaki Kuzuhara
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