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GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
2021
Rui Shan Low
Joel T. Asubar
Ali Baratov
Shunsuke Kamiya
Itsuki Nagase
Shun Urano
Shinsaku Kawabata
Hirokuni Tokuda
Masaaki Kuzuhara
Yusui Nakamura
Kenta Naito
Tomohiro Motoyama
Zenji Yatabe
Keywords:
Environmentally friendly
Optoelectronics
Dielectric
Mist
Materials science
Correction
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