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Donald A. Gajewski
Donald A. Gajewski
Cree Inc.
Electronic engineering
Electrical engineering
Engineering
Power MOSFET
Materials science
5
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85
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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
2018
Materials Science Forum
Edward Van Brunt
Albert A. Burk
Daniel J. Lichtenwalner
R.T. Leonard
Shadi Sabri
Donald A. Gajewski
Andrew K. Mackenzie
Brett Hull
Scott Allen
John W. Palmour
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Citations (13)
Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs
2014
WiPDA | IEEE Workshop on Wide Bandgap Power Devices and Applications
Brett Hull
Scott Allen
Qing Chun Jon Zhang
Donald A. Gajewski
Vipindas Pala
Jim Richmond
S. Ryu
Michael J. O'Loughlin
E. Van Brunt
Lin Cheng
Albert A. Burk
Jeffrey Casady
David Grider
John W. Palmour
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Citations (42)
Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
2014
Materials Science Forum
Donald A. Gajewski
Sei-Hyung Ryu
Mrinal K. Das
Brett Hull
Jonathan Young
John W. Palmour
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Citations (19)
Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET
2014
Microelectronics Reliability
Donald A. Gajewski
Randall Lewis
Benjamin M. Decker
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High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications
2013
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Lin Cheng
Anant K. Agarwal
Marcelo Schupbach
Donald A. Gajewski
Daniel J. Lichtenwalner
Vipindas Pala
Sei-Hyung Ryu
Jim Richmond
John W. Palmour
William B. Ray
James A. Schrock
Argenis Bilbao
Stephen B. Bayne
Aivars J. Lelis
Charles Scozzie
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Citations (9)
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