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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
2018
Edward Van Brunt
Albert A. Burk
Daniel J. Lichtenwalner
R.T. Leonard
Shadi Sabri
Donald A. Gajewski
Andrew K. Mackenzie
Brett Hull
Scott Allen
John W. Palmour
Keywords:
Power semiconductor device
Composite material
Epitaxy
Materials science
Engineering physics
Metallurgy
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