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Tsuyoshi Nomura
Tsuyoshi Nomura
University of Tsukuba
Degradation (geology)
Annealing (metallurgy)
Dielectric strength
Oxygen
Dielectric
2
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2
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Invited) Degradation in HfSiON Film Induced by Electrical Stress Application
2010
Ryu Hasunuma
Chihiro Tamura
Tsuyoshi Nomura
Yuuki Kikuchi
Kenji Ohmori
Motoyuki Sato
Akira Uedono
Toyohiro Chikyow
Kenji Shiraishi
Keisaku Yamada
Kikuo Yamabe
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Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application
2009
IEDM | International Electron Devices Meeting
Ryu Hasunuma
Chihiro Tamura
Tsuyoshi Nomura
Yuuki Kikuchi
Kenji Ohmori
Motoyuki Sato
Akira Uedono
Toyohiro Chikyow
Kenji Shiraishi
Keisaku Yamada
Kikuo Yamabe
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