Old Web
English
Sign In
Acemap
>
authorDetail
>
Hidetoshi Sugiura
Hidetoshi Sugiura
University of Tokyo
Chemical vapor deposition
Analytical chemistry
Chemistry
Sticking probability
Chemical engineering
5
Papers
23
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (5)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Elementary gas‐phase reactions of radical species during chemical vapor deposition of silicon carbide using CH3SiCl3
2021
International Journal of Chemical Kinetics
Noboru Sato
Yuichi Funato
Kohei Shima
Hidetoshi Sugiura
Yasuyuki Fukushima
Takeshi Momose
Mitsuo Koshi
Yukihiro Shimogaki
Show All
Source
Cite
Save
Citations (1)
Fundamental Evaluation of Gas-Phase Elementary Reaction Models for Silicon Carbide Chemical Vapor Deposition
2017
ECS Journal of Solid State Science and Technology
Yuichi Funato
Noboru Sato
Yasuyuki Fukushima
Hidetoshi Sugiura
Takeshi Momose
Yukihiro Shimogaki
Show All
Source
Cite
Save
Citations (5)
Microchannels: High-Aspect-Ratio Parallel-Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition (Adv. Mater. Interfaces 16/2016)
2016
Advanced Materials Interfaces
Kohei Shima
Yuichi Funato
Hidetoshi Sugiura
Noboru Sato
Yasuyuki Fukushima
Takeshi Momose
Yukihiro Shimogaki
Show All
Source
Cite
Save
Citations (1)
High-Aspect-Ratio Parallel-Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition
2016
Advanced Materials Interfaces
Kohei Shima
Yuichi Funato
Hidetoshi Sugiura
Noboru Sato
Yasuyuki Fukushima
Takeshi Momose
Yukihiro Shimogaki
Show All
Source
Cite
Save
Citations (6)
Multi-Scale Analysis and Elementary Reaction Simulation of SiC-CVD Using CH3SiCl3/H2 I. Effect of Reaction Temperature
2013
ECS Journal of Solid State Science and Technology
Yasuyuki Fukushima
Noboru Sato
Yuichi Funato
Hidetoshi Sugiura
Kozue Hotozuka
Takeshi Momose
Yukihiro Shimogaki
Show All
Source
Cite
Save
Citations (10)
1