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Robert Graham Shaw
Robert Graham Shaw
Texas Instruments
Electronic engineering
Engineering
Electrical engineering
LDMOS
Metallurgy
3
Papers
33
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Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs
2018
Materials Science Forum
Asanka Jayawardena
Ayayi C. Ahyi
Gang Liu
Robert Graham Shaw
Sarit Dhar
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Citations (3)
Robust 80 V LDMOS and 100 V DECMOS in a streamlined SOI technology for analog power applications
2002
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Steven L. Merchant
Taylor R. Efland
Sheldon Haynie
William Headen
Kengo Kajiyama
Scott Paiva
Robert Graham Shaw
Isao Tachikake
Toshiyuki Tani
Chin-Yu Tsai
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Citations (4)
Safe operating area considerations in LDMOS transistors
1999
ISPSD | International Symposium on Power Semiconductor Devices and IC's
P. Hower
J Lin
S. Haynie
Scott Paiva
Robert Graham Shaw
N. Hepfinger
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Citations (26)
1