Old Web
English
Sign In
Acemap
>
authorDetail
>
G. Zhan
G. Zhan
University of Padua
Engineering physics
Gallium nitride
Materials science
Extremely high frequency
High-electron-mobility transistor
2
Papers
0
Citations
0
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (2)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Review on the degradation of GaN-based lateral power transistors
2021
C. De Santi
Matteo Buffolo
Isabella Rossetto
T. Bordignon
E. Brusaterra
Alessandro Caria
F. Chiocchetta
D. Favero
M. Fregolent
F. Masin
Nicola Modolo
A. Nardo
F. Piva
Fabiana Rampazzo
C. Sharma
Nicola Trivellin
G. Zhan
Matteo Meneghini
Enrico Zanoni
Gaudenzio Meneghesso
Show All
Source
Cite
Save
Citations (0)
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation
2021
Gaudenzio Meneghesso
Matteo Meneghini
C. De Santi
Matteo Buffolo
Fabiana Rampazzo
F. Chiocchetta
G. Zhan
C. Sharma
Enrico Zanoni
Show All
Source
Cite
Save
Citations (0)
1