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Gyongho Buh
Gyongho Buh
Samsung
Analytical chemistry
Doping
Materials science
Sheet resistance
Dopant
3
Papers
2
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0
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Issues of Ultrashallow Junction for Sub-50 nm Gate Length Transistors: Metrology, Dopant Loss, and Novel Electrostatic Junction
2006
IWJT | International Workshop on Junction Technology
Gyongho Buh
Tai-su Park
G.H. Yon
S.J. Hong
Y. J. Jee
S.B. Kim
Jong-Oh Lee
Chang-Woo Ryoo
J.R. Yoo
J. W. Lee
Yun-Seung Shin
U In Chung
June Moon
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Ultrashallow Arsenic n+/p Junction Formed by AsH3 Plasma Doping
2006
Japanese Journal of Applied Physics
Sungho Heo
Sung-Kweon Baek
Dongkyu Lee
Gyongho Buh
Yu-gyun Shin
Hyunsang Hwang
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Hydrogen effect on ultra-shallow arsenic n/sup +//p junction formed by AsH/sub 3/ plasma doping (PLAD)
2005
IWJT | International Workshop on Junction Technology
Sungho Heo
Sungkweon Baek
Dongkyu Lee
Gyongho Buh
Yugyun Sin
Hyunsang Hwang
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