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E. Ray Hsieh
E. Ray Hsieh
National Chiao Tung University
Electronic engineering
Materials science
High-κ dielectric
MOSFET
Physics
4
Papers
11
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A three-bit-per-cell via-type resistive-random-access-memory gated metal-oxide-semiconductor-field-effect-transistor non-volatile-memory (vRG-MOSFET NVM) with the FORMing-free characteristic
2021
Semiconductor Science and Technology
E. Ray Hsieh
Yi-Xiang Huang
You Hung Ye
Zih Ying Wang
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An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET
2018
IEEE Journal of the Electron Devices Society
E. Ray Hsieh
Meng-Ru Jiang
Jian-Li Lin
Steve S. Chung
T. P. Chen
Shih An Huang
Tai-Ju Chen
Osbert Cheng
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A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak Path
2017
IEEE Transactions on Electron Devices
E. Ray Hsieh
Yen Chen Kuo
Chih-Hung Cheng
Jing Ling Kuo
Meng-Ru Jiang
Jian-Li Lin
Hung-Wen Chen
Steve S. Chung
Chuan Hsi Liu
T. P. Chen
Shih An Huang
Tai-Ju Chen
Osbert Cheng
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Citations (6)
The impact of TiN barrier on the NBTI in an advanced high-k metal-gate p-channel MOSFET
2017
IPFA | International Symposium on the Physical and Failure Analysis of Integrated Circuits
Da-Cheng Huang
E. Ray Hsieh
Jeng Gong
Chih-Fang Huang
Steve S. Chung
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