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Roman R. Khakimov
Roman R. Khakimov
Moscow Institute of Physics and Technology
Thin film
Ferroelectricity
Materials science
Atomic layer deposition
Capacitor
7
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87
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Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf0.5Zr0.5O2/TiN Capacitors
2021
Roman R. Khakimov
A.G. Chernikova
Yury Lebedinskii
Aleksandra A. Koroleva
Andrey M. Markeev
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Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors
2020
Applied Physics Letters
A.G. Chernikova
M. G. Kozodaev
Roman R. Khakimov
Sergey N. Polyakov
A. M. Markeev
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Citations (2)
Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
2019
Journal of Applied Physics
M. G. Kozodaev
Anna Chernikova
Evgeny V. Korostylev
Min Hyuk Park
Roman R. Khakimov
Cheol-Seong Hwang
A. M. Markeev
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Citations (45)
Synthesis of Large Area two-dimensional MoS2 films by Sulfurization of Atomic Layer Deposited MoO3 Thin Film for Nanoelectronic applications
2019
R. I. Romanov
M. G. Kozodaev
Denis I. Myakota
A.G. Chernikova
Sergey M. Novikov
V. S. Volkov
A. S. Slavich
Sergei Zarubin
P. S. Chizhov
Roman R. Khakimov
A.A. Chouprik
Cheol-Seong Hwang
Andrey M. Markeev
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Citations (15)
La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors
2018
Applied Physics Letters
M. G. Kozodaev
Anna Chernikova
Roman R. Khakimov
Min Hyuk Park
A. M. Markeev
Cheol-Seong Hwang
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Citations (18)
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