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Joon-Bae Moon

KAIST

5

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40

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A SONOS device with a separated charge trapping layer for improvement of charge injection

2017 AIP Advances
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Influence of Total Ionizing Dose on Sub-100 nm Gate-All-Around MOSFETs

2014 IEEE Transactions on Nuclear Science
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Total ionizing dose effects on sub-100 nm gate-all-around MOSFETs = 단채널 전면 게이트 트랜지스터의 누적방사선량 효과에 대한 연구

2014
- Joon-Bae Moon
- 문준배
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Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

2014 IEEE Transactions on Electron Devices
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A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage Operation

2014 IEEE Transactions on Electron Devices
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