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Hiroki Ogawa
Hiroki Ogawa
Hosei University
Ion implantation
Optoelectronics
Nuclear magnetic resonance
Threshold voltage
Chemistry
5
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25
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GaN MISFETs Using Tilt Angle Ion Implantation of Magnesium
2016
The transactions of the Institute of Electrical Engineers of Japan.C
Hayao Kasai
Takuya Oikawa
Jun Kimura
Hiroki Ogawa
Tomoyoshi Mishima
Tohru Nakamura
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Invited) Ion Implantation into GaN and Implanted GaN Power Transistors
2015
Kazuki Nomoto
Kengo Takahashi
Oikawa Takuya
Hiroki Ogawa
Tomoaki Nishimura
Tomoyoshi Mishima
Huili Grace Xing
Tohru Nakamura
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Normally‐off GaN MOSFETs with high‐k dielectric CeO2 films deposited by RF sputtering
2014
Physica Status Solidi (c)
Hiroki Ogawa
Takuya Okazaki
Hayao Kasai
Kenta Hara
Yuki Notani
Yasuhiro Yamamoto
Tohru Nakamura
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Nitrogen ion implantation isolation technology for normally‐off GaN MISFETs on p‐GaN substrate
2014
Physica Status Solidi (c)
Hayao Kasai
Hiroki Ogawa
Tomoaki Nishimura
Tohru Nakamura
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Citations (9)
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