Invited) Ion Implantation into GaN and Implanted GaN Power Transistors

We report great possibilities of ion implantation technology for applying to high-power GaN electron devices. We demonstrated high-performance normally-off self-aligned metal gate GaN MISFETs with Si ion implantation to reduce the contact resistances for ohmic contacts and N ion implantation for the device isolation. We formed p-type GaN in n-type GaN using Mg ion implantation and observed p-n junction diode behavior on forward I-V characteristics and EL measurements.