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Takanori Asano

Nagoya University
Japan Society for the Promotion of Science

45

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215

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Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory

2019 IEDM | International Electron Devices Meeting
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Hydrogen-surfactant-mediated epitaxy of Ge1− x Sn x layer and its effects on crystalline quality and photoluminescence property

2017 Japanese Journal of Applied Physics
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Formation and characterization of Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny double heterostructures with strain-controlled Ge1−x−ySixSny layers

2017 Materials Science in Semiconductor Processing
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Experimental observation of type-I energy band alignment in lattice-matched Ge1−x−ySixSny/Ge heterostructures

2016 Applied Physics Letters
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Characterization of crystallinity of Ge1 − xSnx epitaxial layers grown using metal-organic chemical vapor deposition

2016 Thin Solid Films
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Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1− x Sn x epitaxial layer

2016 Japanese Journal of Applied Physics
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Influence of Strain in GeSiSn Layer on Crystallinity of GeSiSn/GeSn/GeSiSn Double-Heterostructure

2016 The Japan Society of Applied Physics
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Characterization of Shallow- and Deep-Level Defects in Undoped Ge1−xSnx Epitaxial Layers by Electrical Measurements

2016 ECS Journal of Solid State Science and Technology
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Defect and dislocation structures in low-temperature-grown Ge and Ge1 − xSnx epitaxial layers on Si(110) substrates

2016 Thin Solid Films
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Growth and applications of GeSn-related group-IV semiconductor materials

2016 SUM | Photonics Society Summer Topical Meeting Series
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