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Characterization of Shallow- and Deep-Level Defects in Undoped Ge1−xSnx Epitaxial Layers by Electrical Measurements
Characterization of Shallow- and Deep-Level Defects in Undoped Ge1−xSnx Epitaxial Layers by Electrical Measurements
2016
Wakana Takeuchi
Takanori Asano
Yuki Inuzuka
Mitsuo Sakashita
Osamu Nakatsuka
Shigeaki Zaima
Keywords:
Analytical chemistry
Electrical measurements
Epitaxy
Chemistry
Optoelectronics
deep level
Correction
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