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Mohamed Oulmane
Mohamed Oulmane
Synopsys
Electronic engineering
Physics
Monte Carlo method
Optoelectronics
Electron mobility
6
Papers
33
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Simulation of photoresist defect transfer through subsequent patterning processes
2020
Dominik Metzler
Mohamed Oulmane
Sagarika Mukesh
Phil Stopford
Karthik Yogendra
Lawrence S. Melvin
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Patterning process exploration of metal 1 layer in 7nm node with 3D patterning flow simulations
2015
Proceedings of SPIE
Weimin Gao
Ivan Ciofi
Yves Saad
Philippe Matagne
Michael Bachmann
Mohamed Oulmane
Werner Gillijns
Kevin Lucas
Wolfgang Demmerle
Thomas Schmoeller
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Symmetry reduction by surface scattering and mobility model for stressed 〈100〉/(001) MOSFETs
2010
SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
F. M. Bufler
Axel Erlebach
Mohamed Oulmane
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Hole Mobility Model With Silicon Inversion Layer Symmetry and Stress-Dependent Piezoconductance Coefficients
2009
IEEE Electron Device Letters
F. M. Bufler
Axel Erlebach
Mohamed Oulmane
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Citations (14)
Simulation of nMOSFETs with a Tensile Strained Cap Layer
2008
F. M. Bufler
Frederik O. Heinz
Alexander Tsibizov
Mohamed Oulmane
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Citations (9)
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