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Yoichi Nogami
Yoichi Nogami
Mitsubishi
Passivation
Degradation (geology)
Humidity
Gallium arsenide
High-electron-mobility transistor
4
Papers
27
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Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation
2008
Japanese Journal of Applied Physics
Takayuki Hisaka
Yoichi Nogami
Hajime Sasaki
Naohito Yoshida
Kazuo Hayashi
Anita A. Villanueva
Jesus A. del Alamo
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Citations (3)
Degradation mechanisms of GaAs PHEMTs in high humidity conditions
2004
Microelectronics Reliability
Takayuki Hisaka
Yasuki Aihara
Yoichi Nogami
Hajime Sasaki
Yasushi Uehara
Naohito Yoshida
Kazuo Hayashi
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Citations (8)
Degradation mechanisms of GaAs PHEMTs in high humidity conditions
2004
Microelectronics Reliability
Takayuki Hisaka
Yasuki Aihara
Yoichi Nogami
Hajime Sasaki
Yasushi Uehara
Naohito Yoshida
Kazuo Hayashi
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Citations (7)
Degradation mechanism of PHEMT under large signal operation
2003
IEEE Gallium Arsenide Integrated Circuit Symposium
T. Hisaka
Yoichi Nogami
H. Sasaki
A. Hasuike
Naohito Yoshida
K. Hayashi
T. Sonoda
Anita A. Villanueva
J.A. del Alamo
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Citations (9)
1