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K. Hayashi
K. Hayashi
Mitsubishi
Electronic engineering
Optoelectronics
Materials science
Gallium arsenide
Voltage
4
Papers
32
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Simulation Study and Reduction of Reverse Gate Leakage Current for GaN HEMTs
2012
CSICS | Compound Semiconductor Integrated Circuit Symposium
Y. Yamaguchi
K. Hayashi
Toshiyuki Oishi
Hiroshi Otsuka
T. Nanjo
Koji Yamanaka
M. Nakayama
Yasuyuki Miyamoto
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Citations (1)
Degradation mechanism of PHEMT under large signal operation
2003
IEEE Gallium Arsenide Integrated Circuit Symposium
T. Hisaka
Yoichi Nogami
H. Sasaki
A. Hasuike
Naohito Yoshida
K. Hayashi
T. Sonoda
Anita A. Villanueva
J.A. del Alamo
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Citations (9)
High efficient C-band 27 W internally-matched GaAs FET for space application
1994
IMS | International Microwave Symposium
M. Kohno
T. Fujioka
K. Hayashi
Yasushi Itoh
I. Ikeda
K. Seino
M. Yamanouchi
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Citations (2)
Photosensitive resins containing p‐dimethylaminobenzylidene derivatives and diphenyliodonium salt as photoinitiators
1987
Journal of Applied Polymer Science
K Ichimura
Atsushi Kameyama
K. Hayashi
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Citations (20)
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