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Pei Ju Chuang

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High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier

2017 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Negative Bias Temperature Instability of SiC MOSFET

2016 Materials Science Forum
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1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination

2015 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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