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Feiyuan Yang
Feiyuan Yang
University of Bristol
Transistor
Optoelectronics
Materials science
Passivation
Trapping
5
Papers
13
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Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution
2021
Yuke Cao
James W Pomeroy
Michael J. Uren
Feiyuan Yang
Martin Kuball
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Citations (1)
Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation
2021
Semiconductor Science and Technology
Feiyuan Yang
Michael J. Uren
Mark Gajda
Stefano Dalcanale
Serge Karboyan
James W Pomeroy
Martin Kuball
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Thermal Design Rules of AlGaN/GaN-Based Microwave Transistors on Diamond
2021
IEEE Transactions on Electron Devices
Thomas Gerrer
James W Pomeroy
Feiyuan Yang
Daniel Francis
Jim Carroll
Brian Loran
Larry Witkowski
Marty Yarborough
Michael J. Uren
Martin Kuball
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Citations (2)
Simulation of leakage induced suppression of bulk dynamic RON in power switching GaN-on-Si HEMTs
2020
Michael J. Uren
Stefano Dalcanale
Feiyuan Yang
Ahmed Nejim
Stephen P. Wilson
Martin Kuball
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The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs
2020
IEEE Transactions on Electron Devices
Feiyuan Yang
Stefano Dalcanale
Mark Gajda
Serge Karboyan
Michael J. Uren
Martin Kuball
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Citations (9)
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